Hydrogen-free SiCN Films Obtained by Electron Cyclotron Resonance Plasma
نویسندگان
چکیده
منابع مشابه
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor deposition was used to produce these films under different values of gas flow ratio, deposition temperature, and microwave power. The amount of bonded hydrog...
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Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection ana...
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Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...
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Reactive ion etching (RIE) using fluorocarbon chemistry is widely used to open contact holes in dielectric layers for very large scale integration (VLSI) since it provides high anisotropy and selectivity over Si. However, it is known that the RIE leaves fluorocarbon residues on the exposed surface after etching of silicon dioxide [1,2]. These residue layers were reported to be nonvolatile, chem...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 2007
ISSN: 0013-4651
DOI: 10.1149/1.2472559